Director of Memory Development

About the role

We are looking for a Director of Memory Development to lead our international memory team in Brno, Czech Republic. You will define and execute the strategy and roadmap for onsemi’s expanding memory portfolio, covering both non‑volatile (EEPROM, OTP, Flash, RRAM, MRAM) and volatile (SRAM, ROM) IP.

Key responsibilities

• Maintain and align the memory roadmap with platform strategies, business goals, and product plans.
• Define make/buy/partner strategies for memory IP and manage third‑party relationships.
• Optimize the portfolio through reuse, lifecycle management, and consistency across technologies.
• Track industry trends and translate them into strategic actions and investment decisions.
• Oversee memory IP development from architecture to production release, ensuring high‑quality, competitive PPA, reliability, testability, and manufacturability.
• Build and lead a high‑performing global memory development organization, defining structure, resourcing, and succession plans.
• Communicate strategy, progress, and risks to senior leadership and act as the primary liaison for stakeholders.

Required profile

• Bachelor’s degree in Electrical Engineering or a related field (Master’s preferred).
• 15+ years of semiconductor memory development experience, with deep expertise in embedded NVM technologies.
• Strong understanding of SRAM architectures and compiler‑based memory solutions.
• Proven leadership experience managing senior technical leaders or managers.
• Track record of defining and delivering memory IP strategies that balance innovation and business needs.
• Extensive cross‑functional leadership across design, technology, test, and reliability.

Required skills

• EEPROM
• OTP
• Flash memory
• RRAM
• MRAM
• SRAM architectures
• Compiler‑based memory solutions
• Memory IP development
• PPA optimization